IXTA180N085T

Obsolete

IXYS

MOSFET N-CH 85V 180A TO263

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 85V 180A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA180N085T

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	430 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	FET Type	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTA180N055T	55 V	180 A	Surface Mount	TO-263AA	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
IXYS IXTA180N085T	85 V	180 A	Surface Mount	TO-263AA	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	7500 pF	170 nC	4 V	5.5 mOhm	20 V	430 W	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 180A (Tc) 430W (Tc) Surface Mount TO-263AA

Technical documentation and resources

No documents available