MOSFET N-CH 55V 180A TO263
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | FET Type | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 55 V | 180 A | Surface Mount | TO-263AA | N-Channel | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||||||||
IXYS | 85 V | 180 A | Surface Mount | TO-263AA | N-Channel | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 7500 pF | 170 nC | 4 V | 5.5 mOhm | 20 V | 430 W | -55 °C | 175 ░C |