DMT69M8LPS-13

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMT69M8LPS-13

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT69M8LPS-13

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1925 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.3 W, 113 W
Qualification	AEC-Q101
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

DMT69M8LPS Series

NRND = Not Recommended for New Design

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Type	Vgs (Max)	Package / Case
Diodes Inc DMT69M8LPS-13	4.5 V 10 V	2 V	-55 °C	150 °C	60 V	MOSFET (Metal Oxide)	2.3 W 113 W	Automotive	33.5 nC	PowerDI5060-8	Surface Mount	1925 pF	AEC-Q101	N-Channel	16 V	8-PowerTDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DMT69M8LPS Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.