DMT69M8LPS Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification	FET Type	Vgs (Max)	Package / Case
Diodes Inc DMT69M8LPS-13	4.5 V 10 V	2 V	-55 °C	150 °C	60 V	MOSFET (Metal Oxide)	2.3 W 113 W	Automotive	33.5 nC	PowerDI5060-8	Surface Mount	1925 pF	AEC-Q101	N-Channel	16 V	8-PowerTDFN

Catalog

NRND = Not Recommended for New Design

Key Features

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low RDS(ON)– Minimizes Power Losses

• Low QG– Minimizes Switching Losses

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.