RBN40H125S1FPQ-A0#CB0
ObsoleteRenesas Electronics Corporation
IGBT 1250V 40A TO-247A BUILT-IN FRD
RBN40H125S1FPQ-A0#CB0
ObsoleteRenesas Electronics Corporation
IGBT 1250V 40A TO-247A BUILT-IN FRD
Description
General part information
RBNxxH125S1 Series Series
The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.
Technical Specifications
Parameters and characteristics for this part
| Specification | RBN40H125S1FPQ-A0#CB0 |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Gate Charge | 85 nC |
| IGBT Type | Trench |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247A |
| Power - Max | 319 W |
| Reverse Recovery Time (trr) | 156 ns |
| Switching Energy (Off) | 1.4 mJ |
| Switching Energy (On) | 2 mJ |
| Td (off) @ 25°C | 124 ns |
| Td (on) @ 25°C | 25 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 600 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.34 V |
| Voltage - Collector Emitter Breakdown (Max) | 1250 V |
Pricing
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