RBN75H125S1FP4-A0#CB0

Obsolete

Renesas Electronics Corporation

IGBT 1250V 75A TO-247PLUS BUILT-IN FRD

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RBN75H125S1FP4-A0#CB0

Obsolete

Renesas Electronics Corporation

IGBT 1250V 75A TO-247PLUS BUILT-IN FRD

Find alt

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Description Series Pricing CAD Documents

Description

General part information

RBNxxH125S1 Series Series

The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

RBNxxH125S1 Series Series

IGBT 1250V 75A TO-247plus Built-In FRD

Part	Gate Charge	Package / Case	Vce(on) (Max)	Operating Temperature	Test Condition Voltage	Test Condition Resistance	Test Condition Voltage (Secondary)	Test Condition Current	Voltage - Collector Emitter Breakdown (Max)	Td (on) @ 25°C	Td (off) @ 25°C	IGBT Type	Package Name	Reverse Recovery Time (trr)	Power - Max	Switching Energy (Off)	Switching Energy (On)	Input Type	Current - Collector (Ic) (Max)	Mounting Type
Renesas Electronics Corporation RBN75H125S1FP4-A0#CB0
Renesas Electronics Corporation RBN40H125S1FPQ-A0#CB0	85 nC	TO-247-3	2.34 V	175 °C	600 V	10 Ohm	15 V	40 A	1250 V	25 ns	124 ns	Trench	TO-247A	156 ns	319 W	1.4 mJ	2 mJ	Standard	80 A	Through Hole
Renesas Electronics Corporation RBN25H125S1FPQ-A0#CB0	56 nC	TO-247-3	2.34 V	175 °C	600 V	10 Ohm	15 V	25 A	1250 V	19 ns	109 ns	Trench	TO-247A	102 ns	223 W	800 µJ	1.1 mJ	Standard	50 A	Through Hole

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RBN75H125S1FP4-A0#CB0 | Datasheet

RBN75H125S1FP4-A0 Datasheet