SCTWA70N120G2V-4

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 91 A IN AN HIP247-4 PACKAGE

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DocumentsDS13730 AN3152 +27

SCTWA70N120G2V-4

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 91 A IN AN HIP247-4 PACKAGE

Deep-Dive with AI

DocumentsDS13730 AN3152 +27

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Technical Specifications

Parameters and characteristics for this part

Specification	SCTWA70N120G2V-4

Current - Continuous Drain (Id) @ 25°C	91 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	3540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	547 W
Supplier Device Package	TO-247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.9 V

SCTWA70N120G2V-4 Series

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics SCTWA70N120G2V-4	150 nC	TO-247-4	TO-247-4	MOSFET (Metal Oxide)	-55 °C	200 C	1200 V	Through Hole	18 V	547 W	4.9 V	N-Channel	-10 V	22 V	3540 pF	91 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	600	$ 24.18
Newark	Each	1	$ 48.64
		5	$ 46.83
		10	$ 45.02
		25	$ 44.52
		50	$ 44.27
		100	$ 40.86
		250	$ 39.23

Description

General part information