SCTWA70N120G2V-4 Series
Manufacturer: STMicroelectronics
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SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 91 A IN AN HIP247-4 PACKAGE
| Part | Gate Charge (Max) | Package / Case | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) | Vgs (Max) Positive | Vgs (Max) Negative | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Power Dissipation (Max) | Vgs(th) (Max) | Technology | Package Name | FET Type | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 150 nC | TO-247-4 | 3540 pF | 1200 V | 30 mOhm | 22 V | -10 V | -55 °C | 200 °C | Through Hole | 547 W | 4.9 V | MOSFET (Metal Oxide) | TO-247-4 | N-Channel | 91 A | 18 V |