SCTWA70N120G2V-4 Series

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

Catalog

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics SCTWA70N120G2V-4	150 nC	TO-247-4	TO-247-4	MOSFET (Metal Oxide)	-55 °C	200 C	1200 V	Through Hole	18 V	547 W	4.9 V	N-Channel	-10 V	22 V	3540 pF	91 A

Catalog

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.