TSM060N03PQ33 RGG

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Taiwan Semiconductor Corporation

30V 62A 40W 2.5V 1 N-CHANNEL PDFN-8(3X3) MOSFETS ROHS

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Taiwan Semiconductor Corporation

30V 62A 40W 2.5V 1 N-CHANNEL PDFN-8(3X3) MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM060N03PQ33 RGG

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1342 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	8-PDFN (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM060N03CP ROG	1160 pF	150 °C	N-Channel	11.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	70 A	2.5 V	54 W	TO-252 (DPAK)	6 mOhm	20 V	30 V
Taiwan Semiconductor Corporation TSM060N03PQ33 RGG	1342 pF		N-Channel		8-PowerWDFN	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	62 A	2.5 V		8-PDFN (3.1x3.1)	6 mOhm	20 V	30 V	-55 °C	150 °C	25.4 nC	40 W
Taiwan Semiconductor Corporation TSM060N03PQ33	1342 pF		N-Channel		8-PowerWDFN	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	15 A 62 A	2.5 V		8-PDFN (3.1x3.1)	6 mOhm	20 V	30 V	-55 °C	150 °C	25.4 nC	2.3 W 40 W
Taiwan Semiconductor Corporation TSM060N03ECP ROG	1210 pF	150 °C	N-Channel	11.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	70 A	2.5 V	54 W	TO-252 (DPAK)	6 mOhm	20 V	30 V
Taiwan Semiconductor Corporation TSM060N03ECP	1210 pF	150 °C	N-Channel	11.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	70 A	2.5 V	54 W	TO-252 (DPAK)	6 mOhm	20 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 62A (Tc) 40W (Tc) Surface Mount 8-PDFN (3.1x3.1)

Technical documentation and resources