TSM060 Series

Catalog

MOSFET N-CHANNEL 30V 70A TO252

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM060N03CP ROG	1160 pF	150 °C	N-Channel	11.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	70 A	2.5 V	54 W	TO-252 (DPAK)	6 mOhm	20 V	30 V
Taiwan Semiconductor Corporation TSM060N03PQ33 RGG	1342 pF		N-Channel		8-PowerWDFN	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	62 A	2.5 V		8-PDFN (3.1x3.1)	6 mOhm	20 V	30 V	-55 °C	150 °C	25.4 nC	40 W
Taiwan Semiconductor Corporation TSM060N03PQ33	1342 pF		N-Channel		8-PowerWDFN	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	15 A 62 A	2.5 V		8-PDFN (3.1x3.1)	6 mOhm	20 V	30 V	-55 °C	150 °C	25.4 nC	2.3 W 40 W
Taiwan Semiconductor Corporation TSM060N03ECP ROG	1210 pF	150 °C	N-Channel	11.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	70 A	2.5 V	54 W	TO-252 (DPAK)	6 mOhm	20 V	30 V
Taiwan Semiconductor Corporation TSM060N03ECP	1210 pF	150 °C	N-Channel	11.1 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	70 A	2.5 V	54 W	TO-252 (DPAK)	6 mOhm	20 V	30 V