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Description

General part information

MV2000-GaAs-Abrupt-Varactor Series

GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies. Standard capacitance tolerance is ±10%, other capacitance values and custom mechanical configurations are also available.

Technical Specifications

Parameters and characteristics for this part

SpecificationMV21001-P00
Capacitance0.3 pF
Capacitance Ratio2.8
Capacitance Ratio Denominator30 F
Capacitance Ratio Numerator0 F
Diode TypeSingle
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseDie
Package NameChip
Q8000
Voltage - Peak Reverse (Max)30 V

Pricing

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