MV2000-GaAs-Abrupt-Varactor Series

GaAs-Abrupt-Varactor

Catalog

GaAs-Abrupt-Varactor

Part	Diode Type	Operating Temperature (Max)	Operating Temperature (Min)	Package Name	Voltage - Peak Reverse (Max)	Mounting Type	Capacitance	Package / Case	Capacitance Ratio	Q	Capacitance Ratio Denominator	Capacitance Ratio Numerator
Microchip Technology MV21008-82	Single	175 °C	-55 °C	Chip	30 V	Surface Mount	1.5 pF	Die	4.3	5000	30 F	0 F
Microchip Technology MV21001-P00	Single	175 °C	-55 °C	Chip	30 V	Surface Mount	0.3 pF	Die	2.8	8000	30 F	0 F
Microchip Technology MV21001-150A	Single	175 °C	-55 °C	Chip	30 V	Surface Mount	0.3 pF	Die	2.8	8000	30 F	0 F
Microchip Technology MV21010-190	Single	175 °C	-55 °C	Chip	30 V	Surface Mount	2.2 pF	Die	4.6	4000	30 F	0 F
Microchip Technology MV2003-30				Chip		Surface Mount		Die

Catalog

GaAs-Abrupt-Varactor

Description

GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to millimeter wave frequencies. Standard capacitance tolerance is ±10%, other capacitance values and custom mechanical configurations are also available.