DMP26M1UFG-7
ActiveDiodes Inc
20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI3333-8
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DMP26M1UFG-7
ActiveDiodes Inc
20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI3333-8
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP26M1UFG-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 71 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 164 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5392 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 3 W, 1.67 W |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1 V |
DMP26M1UFG Series
20V P-Channel Enhancement Mode MOSFET PowerDI3333-8
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 18 A 40 A | POWERDI3333-8 | 2.3 W | 1 V | 20 V | 156 nC | 6.7 mOhm | 8-PowerVDFN | -55 °C | 150 °C | 1.8 V 4.5 V | P-Channel | 5940 pF | 10 V | Surface Mount |
Diodes Inc | MOSFET (Metal Oxide) | 71 A | POWERDI3333-8 | 1.67 W 3 W | 1 V | 20 V | 164 nC | 5.5 mOhm | 8-PowerVDFN | -55 °C | 150 °C | 1.5 V 4.5 V | P-Channel | 5392 pF | 10 V | Surface Mount |
Diodes Inc | MOSFET (Metal Oxide) | 71 A | POWERDI3333-8 | 1.67 W 3 W | 1 V | 20 V | 164 nC | 5.5 mOhm | 8-PowerVDFN | -55 °C | 150 °C | 1.5 V 4.5 V | P-Channel | 5392 pF | 10 V | Surface Mount |
Diodes Inc | MOSFET (Metal Oxide) | 18 A 40 A | POWERDI3333-8 | 2.3 W | 1 V | 20 V | 156 nC | 6.7 mOhm | 8-PowerVDFN | -55 °C | 150 °C | 1.8 V 4.5 V | P-Channel | 5940 pF | 10 V | Surface Mount |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.81 | |
| 10 | $ 0.70 | |||
| 100 | $ 0.49 | |||
| 500 | $ 0.41 | |||
| 1000 | $ 0.35 | |||
| Digi-Reel® | 1 | $ 0.81 | ||
| 10 | $ 0.70 | |||
| 100 | $ 0.49 | |||
| 500 | $ 0.41 | |||
| 1000 | $ 0.35 | |||
| Tape & Reel (TR) | 2000 | $ 0.31 | ||
| 6000 | $ 0.29 | |||
| 10000 | $ 0.28 | |||
Description
General part information
DMP26M1UFG Series
This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources