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DMP26M7UFG-7 - PowerDI3333-8

DMP26M7UFG-7

Active
Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP26M7UFG-7 - PowerDI3333-8

DMP26M7UFG-7

Active
Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP26M7UFG-7
Current - Continuous Drain (Id) @ 25°C18 A, 40 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]156 nC
Input Capacitance (Ciss) (Max) @ Vds5940 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.3 W
Rds On (Max) @ Id, Vgs6.7 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.23
10$ 0.77
100$ 0.51
500$ 0.40
1000$ 0.36
Digi-Reel® 1$ 1.23
10$ 0.77
100$ 0.51
500$ 0.40
1000$ 0.36
Tape & Reel (TR) 2000$ 0.33
4000$ 0.30
6000$ 0.29
10000$ 0.28

Description

General part information

DMP26M1UFG Series

This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.