IRF7473TRPBF
ObsoleteInfineon Technologies
IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 26 MOHM;
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IRF7473TRPBF
ObsoleteInfineon Technologies
IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 26 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7473TRPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.9 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 26 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRF7473 Series
The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.
Documents
Technical documentation and resources