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IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 26 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 61 nC | -55 °C | 150 °C | 26 mOhm | Surface Mount | 2.5 W | 5.5 V | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 100 V | 6.9 A | 10 V | MOSFET (Metal Oxide) | 8-SO | 3180 pF |