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IPW60R024P7XKSA1 - IPW65R099CFD7AXKSA1

IPW60R024P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 24 MOHM;

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IPW60R024P7XKSA1 - IPW65R099CFD7AXKSA1

IPW60R024P7XKSA1

Active
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 24 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R024P7XKSA1
Current - Continuous Drain (Id) @ 25°C101 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]164 nC
Input Capacitance (Ciss) (Max) @ Vds7144 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]291 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackagePG-TO247-3-41
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 11.11
30$ 9.00
120$ 8.47
510$ 7.67
1020$ 7.04
NewarkEach 1$ 16.02
10$ 14.74
25$ 11.18
50$ 10.62
100$ 10.05
480$ 10.04
720$ 9.75

Description

General part information

IPW60R024 Series

The600V CoolMOS™ P7superjunction MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources