
IPW60R024CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 24 MOHM; FAST RECOVERY DIODE
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IPW60R024CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 24 MOHM; FAST RECOVERY DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPW60R024CFD7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 77 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7268 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 320 W |
| Rds On (Max) @ Id, Vgs | 24 mOhm |
| Supplier Device Package | PG-TO247-3-41 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPW60R024 Series
Infineon’sCoolMOS™ CFD7 Superjunction MOSFETIPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such asserver,telecomandEV chargingstations, where it enables significant efficiency improvements. As successor to theCFD2 SJ MOSFET familyit comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Documents
Technical documentation and resources