Zenode.ai Logo
Beta
⌘K
Log InSign Up
STP2N80K5 - TO-220-3

STP2N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 3.5 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTN1224+15
STP2N80K5 - TO-220-3

STP2N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 3.5 OHM TYP., 2 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsTN1224+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP2N80K5
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3 nC
Input Capacitance (Ciss) (Max) @ Vds95 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)45 W
Rds On (Max) @ Id, Vgs4.5 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.12
50$ 0.90
100$ 0.71
500$ 0.60
1000$ 0.49
2000$ 0.46
5000$ 0.44
10000$ 0.42

Description

General part information

STP2N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.