STP2N80K5 Series

N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package

Catalog

N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
STMicroelectronics STP2N80K5	95 pF	Through Hole	2 A	N-Channel	45 W	30 V	4.5 Ohm	MOSFET (Metal Oxide)	TO-220-3	3 nC	TO-220	800 V	10 V	-55 °C	150 °C	5 V

Catalog

N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.