
AIDK12S65C5ATMA1
ActiveTHE 650V COOLSIC SCHOTTKY DIODES OFFER BENCHMARK SWITCHING BEHAVIOR WITH SIGNIFICANTLY BETTER PERFORMANCE VERSUS SI DEVICES
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AIDK12S65C5ATMA1
ActiveTHE 650V COOLSIC SCHOTTKY DIODES OFFER BENCHMARK SWITCHING BEHAVIOR WITH SIGNIFICANTLY BETTER PERFORMANCE VERSUS SI DEVICES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AIDK12S65C5ATMA1 |
|---|---|
| Capacitance @ Vr, F | 363 pF |
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 70 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO263-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
AIDK12 Series
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.
Documents
Technical documentation and resources