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THE 650V COOLSIC SCHOTTKY DIODES OFFER BENCHMARK SWITCHING BEHAVIOR WITH SIGNIFICANTLY BETTER PERFORMANCE VERSUS SI DEVICES
| Part | Technology | Capacitance @ Vr, F | Supplier Device Package | Mounting Type | Grade | Qualification | Package / Case | Current - Average Rectified (Io) | Speed | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SiC (Silicon Carbide) Schottky | 363 pF | PG-TO263-2 | Surface Mount | Automotive | AEC-Q101 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 12 A | No Recovery Time | 0 ns | 650 V | 70 µA | -40 °C | 175 ░C |