SSM3J327R,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3.9A SOT23F

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3.9A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J327R,LF

Current - Continuous Drain (Id) @ 25°C	3.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	93 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)
Toshiba Semiconductor and Storage SSM3J327R,LF	290 pF	93 mOhm	4.6 nC	3.9 A	SOT-23F	P-Channel	Surface Mount	1 V	150 °C	SOT-23-3 Flat Leads	MOSFET (Metal Oxide)	1.5 V 4.5 V	1 W	20 V	8 V

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General part information

P-Channel 20 V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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