Beta
⌘K
MOSFET P-CH 20V 3.9A SOT23F
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Operating Temperature | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 290 pF | 93 mOhm | 4.6 nC | 3.9 A | SOT-23F | P-Channel | Surface Mount | 1 V | 150 °C | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 1 W | 20 V | 8 V |