IXYP20N65C3D1

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IXYS

IGBT 650V 18A 50W TO220

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IXYS

IGBT 650V 18A 50W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXYP20N65C3D1

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	105 A
Gate Charge	30 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	200 W
Reverse Recovery Time (trr)	135 ns
Supplier Device Package	TO-220-3
Switching Energy [custom]	350 µJ
Switching Energy [custom]	430 µJ
Td (on/off) @ 25°C	19 ns, 80 ns
Test Condition	20 A, 400 V, 20 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Package / Case	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max)	Switching Energy [custom]	Switching Energy [custom]	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	IGBT Type	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Power - Max [Max]	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Current - Collector (Ic) (Max) [Max]
IXYS IXYP20N65C3D1M	TO-220-3	30 nC	650 V	TO-220-3	Through Hole	-55 °C	175 ░C	18 A	350 µJ	430 µJ	19 ns 80 ns	2.5 V	PT	105 A	30 ns	50 W	15 V 20 A 20 Ohm 400 V
IXYS IXYP20N65C3D1	TO-220-3	30 nC	650 V	TO-220-3	Through Hole	-55 °C	175 ░C	50 A	350 µJ	430 µJ	19 ns 80 ns	2.5 V	PT	105 A	135 ns	200 W	15 V 20 A 20 Ohm 400 V
IXYS IXYP20N120C3	TO-220-3	53 nC		TO-220-3	Through Hole	-55 °C	175 ░C				20 ns 90 ns	3.4 V		96 A		278 W	10 Ohm 15 V 20 A 600 V	1200 V	1.3 mJ 500 µJ	40 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 650 V 50 A 200 W Through Hole TO-220-3

Technical documentation and resources

No documents available