SPD26N06S2L-35

Obsolete

Infineon Technologies

MOSFET N-CH 55V 30A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 55V 30A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPD26N06S2L-35

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Infineon Technologies SPD26N06S2L-35	2 V	790 pF	4.5 V 10 V	35 mOhm	55 V	MOSFET (Metal Oxide)	PG-TO252-3-11	20 V	Surface Mount	N-Channel	24 nC	68 W	30 A	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources