MOSFET N-CH 55V 30A TO252-3
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Vgs (Max) | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 V | 790 pF | 4.5 V 10 V | 35 mOhm | 55 V | MOSFET (Metal Oxide) | PG-TO252-3-11 | 20 V | Surface Mount | N-Channel | 24 nC | 68 W | 30 A | -55 °C | 175 ░C | DPAK (2 Leads + Tab) SC-63 TO-252-3 |