BSZ15DC02KDHXTMA1

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Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 5.1 A, 0.041 OHM, TSDSON, SURFACE MOUNT

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BSZ15DC02KDHXTMA1

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Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 5.1 A, 0.041 OHM, TSDSON, SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ15DC02KDHXTMA1

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	5.1 A, 3.2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	2.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	419 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	2.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	55 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.4 V

BSZ15DC02 Series

Part	Grade	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Gate Charge (Qg) (Max) @ Vgs	FET Feature	FET Feature
Infineon Technologies BSZ15DC02KDHXTMA1	Automotive	1.4 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	3.2 A 5.1 A	N and P-Channel Complementary	2.5 W	Surface Mount	8-PowerTDFN	55 mOhm	20 V	419 pF	AEC-Q101	2.8 nC	Logic Level Gate	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.81
		10	$ 1.16
		100	$ 0.78
		500	$ 0.62
		1000	$ 0.56
		2000	$ 0.52
	Digi-Reel®	1	$ 1.81
		10	$ 1.16
		100	$ 0.78
		500	$ 0.62
		1000	$ 0.56
		2000	$ 0.52
	Tape & Reel (TR)	5000	$ 0.47

Description

General part information

BSZ15DC02 Series

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources