Beta
⌘K
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 5.1 A, 0.041 OHM, TSDSON, SURFACE MOUNT
| Part | Grade | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Configuration | Power - Max [Max] | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Gate Charge (Qg) (Max) @ Vgs | FET Feature | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Automotive | 1.4 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 3.2 A 5.1 A | N and P-Channel Complementary | 2.5 W | Surface Mount | 8-PowerTDFN | 55 mOhm | 20 V | 419 pF | AEC-Q101 | 2.8 nC | Logic Level Gate | 2.5 V |