NTE2357

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NTE Electronics, Inc

TRANS PREBIAS NPN 50V TO92S

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NTE Electronics, Inc

TRANS PREBIAS NPN 50V TO92S

Technical Specifications

Parameters and characteristics for this part

Specification	NTE2357

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	TO-92S
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition
NTE Electronics, Inc NTE2356	TO-226-3 TO-92-3 Short Body	500 nA	PNP - Pre-Biased	50	50 V	10 kOhms	Through Hole	300 mV	10 kOhms	100 mA	TO-92S	200 MHz
NTE Electronics, Inc NTE2359	TO-226-3 TO-92-3 Short Body	500 nA	NPN - Pre-Biased	50	50 V	47000 Ohms	Through Hole	300 mV	47 kOhms	100 mA	TO-92S	250 MHz
NTE Electronics, Inc NTE2357	TO-226-3 TO-92-3 Short Body	500 nA	NPN - Pre-Biased	50	50 V	22 kOhms	Through Hole	300 mV	22 kOhms	100 mA	TO-92S	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S

Technical documentation and resources

No documents available