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Description

General part information

NTE23 Series

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S

Technical Specifications

Parameters and characteristics for this part

SpecificationNTE2359
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)50
Frequency - Transition250 MHz
Mounting TypeThrough Hole
Package / CaseTO-92-3 Short Body, TO-226-3
Package NameTO-92S
Power - Max300 mW
Resistor - Base (R1) Resistance47 kOhm
Resistor - Emitter Base (R2)47 kOhm
Transistor TypePre-Biased, NPN
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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