SSM3K56MFV,L3F

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 800MA VESM

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 800MA VESM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K56MFV,L3F

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds	55 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K56ACT,L3F	1 nC	N-Channel	1 V	Surface Mount	1.5 V 4.5 V	235 mOhm	CST3	20 V	150 °C	1.4 A	8 V	SC-101 SOT-883	MOSFET (Metal Oxide)	55 pF	500 mW
Toshiba Semiconductor and Storage SSM3K56CT,L3F	1 nC	N-Channel	1 V	Surface Mount	1.5 V 4.5 V	235 mOhm	CST3	20 V		800 mA	8 V	SC-101 SOT-883	MOSFET (Metal Oxide)	55 pF	500 mW
Toshiba Semiconductor and Storage SSM3K56FS,LF	1 nC	N-Channel	1 V	Surface Mount	1.5 V 4.5 V	235 mOhm	SSM	20 V	150 °C	800 mA	8 V	SC-75 SOT-416	MOSFET (Metal Oxide)	55 pF	150 mW
Toshiba Semiconductor and Storage SSM3K56MFV,L3F	1 nC	N-Channel	1 V	Surface Mount	1.5 V 4.5 V	235 mOhm	VESM	20 V	150 °C	800 mA	8 V	SOT-723	MOSFET (Metal Oxide)	55 pF	150 mW

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General part information

N-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM

Technical documentation and resources