MOSFET N-CH 20V 1.4A CST3
| Part | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 nC | N-Channel | 1 V | Surface Mount | 1.5 V 4.5 V | 235 mOhm | CST3 | 20 V | 150 °C | 1.4 A | 8 V | SC-101 SOT-883 | MOSFET (Metal Oxide) | 55 pF | 500 mW |
Toshiba Semiconductor and Storage | 1 nC | N-Channel | 1 V | Surface Mount | 1.5 V 4.5 V | 235 mOhm | CST3 | 20 V | 800 mA | 8 V | SC-101 SOT-883 | MOSFET (Metal Oxide) | 55 pF | 500 mW | |
Toshiba Semiconductor and Storage | 1 nC | N-Channel | 1 V | Surface Mount | 1.5 V 4.5 V | 235 mOhm | SSM | 20 V | 150 °C | 800 mA | 8 V | SC-75 SOT-416 | MOSFET (Metal Oxide) | 55 pF | 150 mW |
Toshiba Semiconductor and Storage | 1 nC | N-Channel | 1 V | Surface Mount | 1.5 V 4.5 V | 235 mOhm | VESM | 20 V | 150 °C | 800 mA | 8 V | SOT-723 | MOSFET (Metal Oxide) | 55 pF | 150 mW |