IDL12G65C5XUMA2
ActiveSILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 600 V, 12 A, 18 NC, VSON
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IDL12G65C5XUMA2
ActiveSILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 600 V, 12 A, 18 NC, VSON
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDL12G65C5XUMA2 |
|---|---|
| Capacitance @ Vr, F | 360 pF |
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 190 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | 4-PowerTSFN |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-VSON-4 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 5.94 | |
| 10 | $ 3.98 | |||
| 100 | $ 2.86 | |||
| 500 | $ 2.39 | |||
| 1000 | $ 2.29 | |||
| Digi-Reel® | 1 | $ 5.94 | ||
| 10 | $ 3.98 | |||
| 100 | $ 2.86 | |||
| 500 | $ 2.39 | |||
| 1000 | $ 2.29 | |||
| Tape & Reel (TR) | 3000 | $ 2.29 | ||
Description
General part information
IDL12G65 Series
The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).
Documents
Technical documentation and resources