Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 600 V, 12 A, 18 NC, VSON
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Supplier Device Package | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 150 °C | -55 °C | Surface Mount | 650 V | No Recovery Time | PG-VSON-4 | 360 pF | 0 ns | 4-PowerTSFN | 190 µA | 12 A | SiC (Silicon Carbide) Schottky |