
IPD320N20N3GATMA1
ActivePOWER MOSFET, N CHANNEL, 200 V, 34 A, 0.027 OHM, TO-252 (DPAK), SURFACE MOUNT
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IPD320N20N3GATMA1
ActivePOWER MOSFET, N CHANNEL, 200 V, 34 A, 0.027 OHM, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPD320N20N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 136 W |
| Rds On (Max) @ Id, Vgs [Max] | 32 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
IPD320 Series
The IPD320N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Documents
Technical documentation and resources