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IPD320N20N3GATMA1 - TO252-3

IPD320N20N3GATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 200 V, 34 A, 0.027 OHM, TO-252 (DPAK), SURFACE MOUNT

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IPD320N20N3GATMA1 - TO252-3

IPD320N20N3GATMA1

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 200 V, 34 A, 0.027 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD320N20N3GATMA1
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds2350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)136 W
Rds On (Max) @ Id, Vgs [Max]32 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.70
10$ 2.43
100$ 1.70
500$ 1.39
1000$ 1.29
Digi-Reel® 1$ 3.70
10$ 2.43
100$ 1.70
500$ 1.39
1000$ 1.29
Tape & Reel (TR) 2500$ 1.26
NewarkEach 1$ 3.15
10$ 2.31
100$ 1.66
500$ 1.35
1000$ 1.26
2500$ 1.24

Description

General part information

IPD320 Series

The IPD320N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Documents

Technical documentation and resources