POWER MOSFET, N CHANNEL, 200 V, 34 A, 0.027 OHM, TO-252 (DPAK), SURFACE MOUNT
| Part | Vgs (Max) | Technology | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | MOSFET (Metal Oxide) | 32 mOhm | 200 V | 136 W | Surface Mount | 29 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 34 A | 10 V | 2350 pF | N-Channel | PG-TO252-3 | -55 °C | 175 ░C | 4 V |