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DMN26D0UFB4-7 - Package Image for X2-DFN1006-3

DMN26D0UFB4-7

Obsolete
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.24A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, ULTRA SMALL, PLASTIC, CASE DFN1006H4-3, 3 PIN

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DMN26D0UFB4-7 - Package Image for X2-DFN1006-3

DMN26D0UFB4-7

Obsolete
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.24A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, ULTRA SMALL, PLASTIC, CASE DFN1006H4-3, 3 PIN

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Technical Specifications

Parameters and characteristics for this part

SpecificationDMN26D0UFB4-7
Current - Continuous Drain (Id) @ 25°C230 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds14.1 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]350 mW
Rds On (Max) @ Id, Vgs [Max]3 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DMN26D0UFB4 Series

NRND = Not Recommended for New Design