DMN26D0UFB4-7B

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN26D0UFB4-7B

Current - Continuous Drain (Id) @ 25°C	240 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14.1 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

NRND = Not Recommended for New Design

Part	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package
Diodes Inc DMN26D0UFB4-7	3 Ohm	350 mW	10 V	Surface Mount	230 mA	-55 °C	150 °C	1.5 V 4.5 V	N-Channel	3-XFDFN	1.1 V	20 V	14.1 pF	MOSFET (Metal Oxide)
Diodes Inc DMN26D0UT-7	3 Ohm	300 mW	10 V	Surface Mount	230 mA	-55 °C	150 °C	1.2 V 4.5 V	N-Channel	SOT-523	1 V	20 V	14.1 pF	MOSFET (Metal Oxide)	SOT-523
Diodes Inc DMN26D0UFB4-7B	3 Ohm	350 mW	10 V	Surface Mount	240 mA	-55 °C	150 °C	1.5 V 4.5 V	N-Channel	3-XFDFN	900 mV	20 V	14.1 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NRND = Not Recommended for New Design

Technical documentation and resources