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STI47N60DM6AG - STMICROELECTRONICS Z0402MH

STI47N60DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 70 MOHM TYP., 36 A MDMESH DM6 POWER MOSFET IN AN I2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDS12101TN1224+25
STI47N60DM6AG - STMICROELECTRONICS Z0402MH

STI47N60DM6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 70 MOHM TYP., 36 A MDMESH DM6 POWER MOSFET IN AN I2PAK PACKAGE

Deep-Dive with AI

DocumentsDS12101TN1224+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTI47N60DM6AG
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2350 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]250 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageTO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.39
10$ 5.48
100$ 4.57
500$ 4.03
1000$ 3.63
2000$ 3.40
NewarkEach 1$ 9.23
10$ 7.02
25$ 6.96
50$ 6.30
100$ 5.63
250$ 5.35
500$ 5.06

Description

General part information

STI47N60DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.