STI47N60DM6AG Series

Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an I2PAK package

Catalog

Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an I2PAK package

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Grade	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package
STMicroelectronics STI47N60DM6AG	MOSFET (Metal Oxide)	10 V	55 nC	AEC-Q101	Through Hole	4.75 V	I2PAK TO-262-3 Long Leads TO-262AA	2350 pF	25 V	N-Channel	Automotive	600 V	-55 °C	150 °C	250 W	36 A	80 mOhm	TO-262 (I2PAK)

Catalog

Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an I2PAK package

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.