SPB80P06PGATMA1

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Infineon Technologies

POWER MOSFET, P CHANNEL, 60 V, 80 A, 0.021 OHM, TO-263 (D2PAK), SURFACE MOUNT

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SPB80P06PGATMA1

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Infineon Technologies

POWER MOSFET, P CHANNEL, 60 V, 80 A, 0.021 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SPB80P06PGATMA1

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	173 nC
Input Capacitance (Ciss) (Max) @ Vds	5033 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	340 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

SPB80P06 Series

Part	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Mounting Type	Vgs(th) (Max) @ Id	FET Type
Infineon Technologies SPB80P06PGATMA1	PG-TO263-3-2	20 V	340 W	10 V	23 mOhm	5033 pF	60 V	173 nC	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	Surface Mount	4 V	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.87
		10	$ 3.25
		100	$ 2.63
		500	$ 2.34
	Digi-Reel®	1	$ 3.87
		10	$ 3.25
		100	$ 2.63
		500	$ 2.34
	Tape & Reel (TR)	1000	$ 2.00
		2000	$ 1.89
		5000	$ 1.81
Newark	Each (Supplied on Cut Tape)	1	$ 3.95
		10	$ 2.95
		25	$ 2.77
		50	$ 2.58
		100	$ 2.39
		250	$ 2.27
		500	$ 2.13
		1000	$ 1.80

Description

General part information

SPB80P06 Series

The SPB80P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.

Documents

Technical documentation and resources