POWER MOSFET, P CHANNEL, 60 V, 80 A, 0.021 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Technology | Mounting Type | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO263-3-2 | 20 V | 340 W | 10 V | 23 mOhm | 5033 pF | 60 V | 173 nC | -55 °C | 175 ░C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | Surface Mount | 4 V | P-Channel |