
BUK9K52-60E,115
ActiveNexperia USA Inc.
DUAL N-CHANNEL 60 V, 55 MΩ LOGIC LEVEL MOSFET

BUK9K52-60E,115
ActiveNexperia USA Inc.
DUAL N-CHANNEL 60 V, 55 MΩ LOGIC LEVEL MOSFET
Description
General part information
BUK9K52 Series
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9K52-60E,115 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 16 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 10 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 725 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LFPAK56, SOT-1205 |
| Package Name | LFPAK56D |
| Power - Max | 32 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 49 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Designing RC Snubbers
Reflow soldering profile
Power MOSFET frequently asked questions and answers
Nexperia package poster
LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation
Power MOSFET single-shot and repetitive avalanche ruggedness rating
LFPAK MOSFET thermal design guide, Chinese version
Using Power MOSFET Zth Curves
Failure signature of Electrical Overstress on Power MOSFETs
LFPAK56D the ultimate dual MOSFET
plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body
LFPAK MOSFET thermal design guide - Part 2
LFPAK MOSFET thermal design guide
BUK9K52-60E Thermal design model
plastic, single ended surface mounted package (LFPAK56D); 8 leads
Wave soldering profile
Using power MOSFETs in parallel
RC Thermal Models