BUK9K52-60RAX
ActiveDUAL N-CHANNEL 60 V, 55 MOHM LOGIC LEVEL MOSFET IN LFPAK56D USING REPETITIVE AVALANCHE TECHNOLOGY
BUK9K52-60RAX
ActiveDUAL N-CHANNEL 60 V, 55 MOHM LOGIC LEVEL MOSFET IN LFPAK56D USING REPETITIVE AVALANCHE TECHNOLOGY
Description
General part information
BUK9K52 Series
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9K52-60RAX |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 16 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 5.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 725 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LFPAK56, SOT-1205 |
| Package Name | LFPAK56D |
| Power - Max (Ta) | 32 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 49 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.1 V |
Pricing
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