RN1101CT(TPL3)

Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 20V 0.05A CST3

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Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 20V 0.05A CST3

Technical Specifications

Parameters and characteristics for this part

Specification	RN1101CT(TPL3)

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Surface Mount
Package / Case	SOT-883, SC-101
Power - Max [Max]	50 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	CST3
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Power - Max [Max]	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage RN1101MFV,L3F(CT	150 mW	NPN - Pre-Biased	Surface Mount	30	100 mA	VESM	SOT-723	300 mV	500 nA	4700 Ohms	4.7 kOhms	50 V
Toshiba Semiconductor and Storage RN1101CT(TPL3)	50 mW	NPN - Pre-Biased	Surface Mount	30	50 mA	CST3	SC-101 SOT-883	150 mV	500 nA	4700 Ohms	4.7 kOhms		20 V
Toshiba Semiconductor and Storage RN1101ACT(TPL3)	100 mW	NPN - Pre-Biased	Surface Mount	30	80 mA	CST3	SC-101 SOT-883	150 mV	500 nA	4700 Ohms	4.7 kOhms	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 50 mA 50 mW Surface Mount CST3

Technical documentation and resources