RN1101 Series

Catalog

TRANS PREBIAS NPN 50V 0.1A VESM

Part	Power - Max [Max]	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage RN1101MFV,L3F(CT	150 mW	NPN - Pre-Biased	Surface Mount	30	100 mA	VESM	SOT-723	300 mV	500 nA	4700 Ohms	4.7 kOhms	50 V
Toshiba Semiconductor and Storage RN1101CT(TPL3)	50 mW	NPN - Pre-Biased	Surface Mount	30	50 mA	CST3	SC-101 SOT-883	150 mV	500 nA	4700 Ohms	4.7 kOhms		20 V
Toshiba Semiconductor and Storage RN1101ACT(TPL3)	100 mW	NPN - Pre-Biased	Surface Mount	30	80 mA	CST3	SC-101 SOT-883	150 mV	500 nA	4700 Ohms	4.7 kOhms	50 V