DMP1018UCB9-7

Obsolete

Diodes Inc

TRANS MOSFET P-CH 12V 7.6A 9-PIN UWLP T/R

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Obsolete

Diodes Inc

TRANS MOSFET P-CH 12V 7.6A 9-PIN UWLP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMP1018UCB9-7

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.9 nC
Input Capacitance (Ciss) (Max) @ Vds	457 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLBGA, 9-UFBGA
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	U-WLB1515-9
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-6 V
Vgs(th) (Max) @ Id	1.3 V

P-CHANNEL ENHANCEMENT MODE MOSFET

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case
Diodes Inc DMP1018UCB9-7	P-Channel	-55 °C	150 °C	7.6 A	18 mOhm	-6 V	457 pF	1 W	2.5 V 4.5 V	12 V	Surface Mount	MOSFET (Metal Oxide)	1.3 V	U-WLB1515-9	4.9 nC	9-UFBGA WLBGA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-CHANNEL ENHANCEMENT MODE MOSFET

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