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P-CHANNEL ENHANCEMENT MODE MOSFET
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P-CHANNEL ENHANCEMENT MODE MOSFET
P-CHANNEL ENHANCEMENT MODE MOSFET
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | P-Channel | -55 °C | 150 °C | 7.6 A | 18 mOhm | -6 V | 457 pF | 1 W | 2.5 V 4.5 V | 12 V | Surface Mount | MOSFET (Metal Oxide) | 1.3 V | U-WLB1515-9 | 4.9 nC | 9-UFBGA WLBGA |