SSM3K329R,LF

Toshiba Semiconductor and Storage

MOSFET N CH 30V 3.5A 2-3Z1A

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Toshiba Semiconductor and Storage

MOSFET N CH 30V 3.5A 2-3Z1A

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K329R,LF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	123 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	126 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3K329R,LF	12 V	1.5 nC	126 mOhm	SOT-23-3 Flat Leads	MOSFET (Metal Oxide)	SOT-23F	Surface Mount	1.8 V 4 V	123 pF	1 V	150 °C	N-Channel	30 V	3.5 A	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources